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We demonstrate the origin of, and quantify the contributions to, the poor external differential efficiency we observe in InP quantum dot lasers. Injection efficiency limits the internal differential quantum efficiency to 50%.
Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3 mum at 200 K with 1.1% strain in the QW.
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