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A method for thermal-stabilization of silicon microdisk resonators, based on thermooptic polymer coatings, is proposed. Two orders of magnitude improvement in thermal stability is expected. Effects on Q and major fabrication challenges are discussed.
Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide channel waveguides. Net gain of up to 2.0 dB/cm was measured, demonstrating this material to provide a competitive active integrated optics technology.
Silicon photonics technologies are potentially useful in quantum information and communication experiments. This talk describes the first entangled photon-pair generation experiment to use a silicon wire waveguide, and discusses the application of silicon-based entanglement sources in quantum communication systems.
We have investigated the fabrication and characterization of 3-dimensionally confined optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes. Such microcavities on Si are free of defects and exhibit a Q-factor of 3,000.
We present a novel ultrafast pump-probe system, allowing for a drastic reduction in acquisition time, typically a few tens of minutes for 20,000 frames. We present acoustic waves and heat transfer measurements in nanometric layers.
We demonstrate a compact silicon-on-insulator wavelength division multiplexer. The device supports 21 channels, has 1 nm channel spacing and less than -10 dB crosstalk.
A plasmonic resonant nano-focusing-antenna has been experimentally integrated with a Si waveguide to effectively convert an incoming waveguide mode to a localized plasmon mode and focus light in an ultrasmall volume in all 3 dimensions.
Si-nc light emission, overcoming limitations of c-Si, is described by a rate equation formalism within the ADE-FDTD scheme. Following this scheme, we design a series of resonant devices which tune and enhance the Si-nc luminescence.
Temporal characteristics of band-edge photonic crystal lasers were explored with high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 mum with temporal responses indicating modulation speeds greater than 25 GHz.
A cladding-modulated Bragg grating implemented using periodic placements of silicon cylinders in the cladding along a silicon waveguide is proposed. Modeling results are verified experimentally, demonstrating coupling strengths differing by an order of magnitude.
We propose and analyze 3- and 5-layer sub-wavelength silicon-based plasmonic waveguide switches. Above-bandgap femtosecond pump pulses are used to modulate 1550 nm signals with switching time ~5 ps and high on/off contrast ratio of 23 dB.
We demonstrate a wideband invisibility cloak in the optical regime composed of nanometer scale non-resonant dielectric structures. The cloak conceals a deformation on a reflecting surface, under which an object can be hidden.
We demonstrate a fast integrated germanium photodetector above 40 GHz and its integration with a silicon microring resonator-based wavelength division demultiplexer.
We summarize recent work in germanium quantum well physics and devices, in nanophotonic and nano-metallic structures for enhanced photodetection, and in fundamental limits to optical components, for applications such as slow light and optical interconnects to silicon.
A simple chemical method for reducing free-carrier lifetime in silicon photonics while maintaining low optical loss is presented. Lifetimes of ~ 300 ps for optical losses of ~ 0.4 cm-1 are achieved. Ramifications for nonlinear optics are discussed.
A holey fiber design with a high index nanostructure that can achieve an effective mode area not in excess of 0.3 mum2 and a flat dispersion at the 1.55 mum band is proposed and studied.
By integrating coherent imaging (optical coherence tomography) into an ultrafast machining platform, we directly monitor surface and subsurface changes in sample morphology due to the laser ablation and subsequent relaxation between laser pulses.
We have achieved superior quality non-tapered InN nanowires on Si(111) by molecular beam epitaxy, which are free of dislocations and exhibit bright photoluminescence at room-temperature and significantly reduced spectral broadening (linewidth~18.5 meV at 77 K).
We present experimental evidence for the resolution-enhancing effect of an annular pupil-plane aperture in two-photon semiconductor microscopy in the vectorial-focusing regime. At an illumination wavelength of 1550 nm we achieved a resolution of 70 nm (lambda/22).
We present results demonstrating the excitation of surface phonon-polaritons at the interface between SiC and different materials. The resonant nature of the excitation can be used to sense minute substance amounts or distinguish between substances.
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