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We demonstrate error free transmission at bit rates up to 32 Gb/s at room temperature and 25 Gb/s at 85degC using a 9 mum oxide aperture 850 nm VCSEL. The VCSEL design is optimized for high speed operation by minimizing parasitics, reducing self-heating, and using strained InGaAs quantum wells to improve differential gain.
Recent progress on fabrication technology and demonstration of current injection GaN-based blue VCSELs are presented. Performance of current injection blue VCSELs with threshold current of 1.4 mA and emission wavelength of 462 nm are described.
Successful application of recently developed GaSb-based single-mode vertical-cavity surface-emitting lasers for gas-sensing at 2.3 mum is reported. CO and CH4 have been detected simultaneously using wavelength modulation spectroscopy with a multi-line curve fit concept.
Two microwave signals of different frequencies are used to directly modulate the top and bottom cavity of a coupled dual-cavity VCSEL. Signal mixing is observed from the laser output which can be engineered by varying the DC biases to the two cavities.
The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact together with a dielectric current confinement layer and oxidized AlInN/GaN distributed Bragg reflectors.
We present the operation of electrically-injected 1528 nm GaInNAsSb vertical cavity surface emitting lasers grown on GaAs. Pulsed lasing at room temperature and continuous wave lasing at low temperatures are reported for the first time.
We demonstrated circularly-polarized lasing in a (110)-oriented VCSEL based on InGaAs/GaAs QWs by optical pumping for the first time. High degree of circularly polarization (0.94) was achieved reflecting long spin relaxation times in (110) QWs.
We present a monolithically integrated, InP-based 2D long-wavelength VCSEL array with coupling near fields. These lasers, utilizing a buried tunnel junction for current confinement, show partly coherent emission at 1.55 mum wavelength.
We report on the intracavity frequency-doubling of a GaInNAs/GaAs disk laser. The laser operated at 1220 nm and delivered 4.6 W of power at ~610 nm. The red emission was further frequency-doubled to 305 nm.
Record fundamental mode output power of 8 mW at 0degC and 6.5 mW at room temperature is achieved with wafer-fused VCSELs incorporating regrown tunnel junction and emitting at the 1550 nm waveband.
InP-based, long-wavelength VCSELs utilizing a buried tunnel junction (BTJ), emitting at 1.55 mum with improved active region and reduced parasitics are demonstrated. A superior modulation-bandwidth >10 GHz is achieved up to 85degC. Potential bit-rates of 12.5 or even 17 Gb/s are feasible for cost-effective 100 G Ethernet solutions at metro-range.
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