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We will discuss results of InGaN material and device growth by HVPE. Application of new device concepts for LEDs arising from new HVPE capabilities will be discussed, including all-HVPE InGaN based LEDs for SSL.
Nanoheteroepitaxy of InGaN-based light-emitting diodes on patterned AGOG sapphire by using abbreviated growth mode, leads to significant reduction in dislocation density and 24% increase in efficiency.
This work provides motivation and background for work on nonpolar and semipolar GaN-based materials and then highlight UCSB work on growth of nonpolar and semipolar GaN on foreign substrates and on freestanding GaN substrates. UCSB work on nonpolar and semipolar GaN lighting emitting devices, including record 405 nm LED performance, the first nonpolar and semipolar GaN-based laser diodes, the first...
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