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We demonstrate a fast integrated germanium photodetector above 40 GHz and its integration with a silicon microring resonator-based wavelength division demultiplexer.
A simple chemical method for reducing free-carrier lifetime in silicon photonics while maintaining low optical loss is presented. Lifetimes of ~ 300 ps for optical losses of ~ 0.4 cm-1 are achieved. Ramifications for nonlinear optics are discussed.
We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.
We demonstrate four-wave mixing in silicon nitride waveguides with -7.1 dB conversion efficiency between the signal and idler. We observe no evidence of nonlinear losses with pump powers as high as 110 W.
All-planar integration of a light source with coupling waveguide on a Si chip is achieved using high-Q, Er doped silicon-rich silicon nitride (SRSN) microdisks and SU-8 waveguide. As-fabricated microdisks show Q-factors of 1-1.5 times 104 for both TE- and TM-like modes. Upon integration with single-mode SU-8 waveguide and clad with a polymer layer, Q-factor decreases to 5,000 for the TE-like mode,...
We demonstrate GHz-speed electro-optic modulation using microring resonators in a deposited layer of polycrystalline silicon. Active optical devices in a deposited microelectronic material can enable monolithic large-scale integration of photonic networks on a microelectronic chip.
We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented.
We report on the fabrication of InP-based 2D photonic crystal lasers operating around 1.5 mum at room temperature integrated and evanescently coupled to SOI waveguides. Laser operation is obtained from a line defect structure accurately aligned on top the SOI circuitry.
We report the measurement of free-carrier nonlinearities in nanoporous silicon waveguides at 1550 nm. Although the waveguide is approximately 70% porous, it exhibits stronger and faster free-carrier effects than those of crystalline silicon waveguides.
We integrated monolithically vertical p-i-n Ge photodetectors with variable optical attenuators (VOAs) based on Si wire rib waveguides with a carrier injection structure. The fabricated Ge photodetectors have a low dark current of 60 nA and a high responsivity of 0.85 A/W at -1 V and accurately detect the change in light power due to the Si-VOA.
We report a suppression, attributed to erbium stimulated emission, of the photoinduced absorption of a 1.53 um probe in erbium doped silicon rich nitride waveguides. Resonators with record high quality factors >14,000 are achieved.
We demonstrate a silicon-organic hybrid waveguide fabricated by vapor deposition of a small molecule with a large third-order nonlinearity on a silicon-on-oxide slotted waveguide. The resulting organic cladding has a high third-order susceptibility, high optical quality, and it homogenously fills the slot where the optical mode propagates.
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