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We have investigated the fabrication and characterization of 3-dimensionally confined optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes. Such microcavities on Si are free of defects and exhibit a Q-factor of 3,000.
We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.
We report novel single-crystalline wurtzite InGaAs/GaAs core-shell quantum well nanoneedles with photoluminescence below the 1.12 eV silicon bandgap, grown on GaAs or Si. This long wavelength enables integration with silicon waveguides and CMOS devices.
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