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We used pump-probe technique to investigate recombination dynamics of photogenerated carriers in photodiodes consisting of InAs/GaInSb W-structured superlattices. Recombination time constants of 1.6 ns and 10 ns were measured under high and low powers, respectively.
We observed that photoluminescence intensities clamped at certain values as the pump intensity was increased, due to the presence of nonlinear degenerate electron gas and saturation of photogenerated and localized holes in InN.
The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.
We report on the effects of carrier localization at different temperatures on the integrated photoluminescence (PL) and time-resolved PL of CdSe/ZnCdMgSe self-assembled quantum dots. Results explain the PL anomalous temperature behavior.
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