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We review recent results on wafer fused long wavelength VCSELs emitting in the 1310 - 2000 nm range. This technology allows reaching fundamental mode output in excess of 4.5 mW at room temperature and close to 3 mW at 70degC for both the 1310 nm and 1550 nm wavebands-the highest values obtained so far. Emission wavelength can be tuned continuously with current with a tuning range as large as 15 nm...
We fabricated and characterized a vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs). Circularly polarized lasing in the (110) VCSEL by optical injection of spin-polarized electrons has been demonstrated at 77 K and room temperature. A high degree of circular polarization, 0.94, was observed at 77 K, reflecting the long electron spin relaxation...
We demonstrate first experimental evidence of polarization switching in Stranski-Krastanov (SK) and submonolayer (SML) quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs). In the case of a SMLQD VCSEL polarization switching is accompanied by polarization mode hopping and is associated with a change of linearly polarized light to elliptically polarized one, hence switching takes place...
Three methods to obtain in GaAs-based oxide-confined GaInNAs/GaAs quantum-well (QW) VCSELs an efficient emission of the 1.3-mum radiation have been analysed and compared with the aid of the comprehensive fully self-consistent model. In the tuned VCSEL, QW composition (high N content) and thickness are selected to tune the 1.3-mum emission which ensures low threshold currents. However, manufacturing...
In the present paper, the comprehensive self-consistent VCSEL physical model is used to analyse excitation of successive transverse cavity modes in oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) using the double intra-cavity-contacted 5-lambda-cavity double-quantum-well GaAs-based GaInNAs/GaAs OC VCSEL emitting the 1.3-mum radiation as a typical VCSEL example. As expected,...
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