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Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths...
In this paper, results on processing and characterization of an optically pumped hybrid distributed feedback cavity for C-band applications are presented. Nanoimprinting lithography has been used for grating fabrication. An erbium-doped organic material has been used as active layer. Potential for integration of the DFB cavity into a single mode waveguide operating in the C-band is demonstrated by...
Three methods to obtain in GaAs-based oxide-confined GaInNAs/GaAs quantum-well (QW) VCSELs an efficient emission of the 1.3-mum radiation have been analysed and compared with the aid of the comprehensive fully self-consistent model. In the tuned VCSEL, QW composition (high N content) and thickness are selected to tune the 1.3-mum emission which ensures low threshold currents. However, manufacturing...
In the present paper, the comprehensive self-consistent VCSEL physical model is used to analyse excitation of successive transverse cavity modes in oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) using the double intra-cavity-contacted 5-lambda-cavity double-quantum-well GaAs-based GaInNAs/GaAs OC VCSEL emitting the 1.3-mum radiation as a typical VCSEL example. As expected,...
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