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Polycrystalline Cu(InGa)Se2 (CIGS) thin films have been grown onto a soda-lime glass substrate by the co-evaporation process using ionized Ga. It was found from the XRD and Raman measurements that the crystallinity of the films grown with ionized Ga was equivalent to the films grown with normal Ga. In addition, a reduction of defect densities measured by the admittance spectroscopy and the improvement...
Simple sandwich-type device structures have been fabricated by deposition of metal contacts on opposing faces of polycrystalline diamond films synthesised using chemical vapour deposition. The electrical characteristics of these devices have been investigated during exposure to a 6 megavolt photon beam from a clinical linear accelerator. The photocurrent appears to vary as the dose rate to the power...
To determine a suitable passivation and insulation layer for HgCdTe photodiodes, the properties of various low temperature plasma-enhanced chemical vapour deposition (PECVD) SiN films were investigated. Metal-insulator-metal (MIM) capacitors were fabricated on silicon to determine a suitable PECVD SiN film for insulation of HgCdTe diodes. It was found that PECVD process temperature of 125degC, at...
Deep Level Transient Spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS) have been used to distinguish the difference between electrically active point and extended defects in MOVPE-grown n-type GaN. Three dominant features are observed in the conventional DLTS spectrum, with energies in the region of 40 meV, 550 meV and 1.46 eV. However, detailed examination with LDLTS shows that all these...
HgCdTe is the preferred semiconductor for fabrication of high-performance infrared (IR) detectors. This material also typically contains multiple carrier species for charge transport, which makes characterisation of the mobility and concentration of each species particularly difficult. Accurate carrier transport characterisation can be achieved by quantitative mobility spectrum analysis of variable-magnetic-field...
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