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The structural stability of InAs stacking-fault tetrahedron (InAs-SFT) on GaAs(111) is systematically investigated in terms of strain relaxation by using an empirical potential incorporating electrostatic energy contribution. The InAs-SFT is more stable than coherently grown InAs on GaAs(111) beyond 21 monolayers (MLs), which are comparable with critical film thickness of misfit dislocation generation...
We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.
Transport, magnetotransport and magnetic properties of structures with GaAs/In0.17Ga0.83As/GaAs quantum well (QW) in GaAs have been measured in the temperature interval 4.2<T<300 K. The structures were delta-doped by Mn and carbon to provide magnetic properties and enhanced p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. Anomalous Hall-effect and...
In this work, we report a metal-splitting field plate gate on heterojunction doped-channel field effect transistors (HDCFETs) with an application of GaAs-bulk. Experimentally, a HDCFET with a gate-metal length of 0.4 mum, a field-plate length of 0.6 mum, and a bulk thickness of 120 nm was successfully fabricated for comparing to that with a 1-mum traditional planar-gate. The current density (451 mA/mm),...
We have studied the formation of nitrogen-related defects created in compound semiconductors by low-energy ion bombardment (0.3-5 keV N2+ or Ar+) using near-edge x-ray absorption fine structure (NEXAFS) around the N K-edge. Nitrogen interstitials and antisites have been identified in NEXAFS spectra of InN and GaN in full agreement with theoretical calculations. Several defect levels within the band...
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation...
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