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We evaluate an ordered organic-inorganic solar cell architecture based on CdS QD-decorated ZnO nanorod arrays encased in the hole-conducting polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT). In this work, CdS quantum dot with different sizes were attached to the surface of the nanorods capped with mercaptopropionic acid. The results show that the CdS QDs on the ZnO nanorods increase both the open circuit...
The semiconductor-passivating layer interfaces, as well as their dielectric properties, play important and very often dominant roles in determining HgCdTe device performance. In this work, photoconductors were fabricated on p-type mid-wave infrared Hg1-xCdxTe material using molecular beam epitaxy (MBE) grown CdTe film as the passivation layer. In order to emphasize the importance of the CdTe passivating...
The combination of the surface photovoltaic and the photoacoustic techniques was used for probing the surface electron-phonon interaction (SEPI) and the mechanism of nonradiative transitions of the three typical nanocrystalline semiconductors at room temperature upon illumination of UV. near IR light. The results showed that the SEPIs on the La-doped nano-TiO2 and the nano-La1-xSrxFeO3 had nothing...
To determine a suitable passivation and insulation layer for HgCdTe photodiodes, the properties of various low temperature plasma-enhanced chemical vapour deposition (PECVD) SiN films were investigated. Metal-insulator-metal (MIM) capacitors were fabricated on silicon to determine a suitable PECVD SiN film for insulation of HgCdTe diodes. It was found that PECVD process temperature of 125degC, at...
Extrinsic p-type doping of Mercury Cadmium Telluride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR) and Secondary Ion Mass Spectrometry (SIMS). A preliminary study on various activation annealing techniques is made, where HgCdTe layers were...
HgCdTe is the preferred semiconductor for fabrication of high-performance infrared (IR) detectors. This material also typically contains multiple carrier species for charge transport, which makes characterisation of the mobility and concentration of each species particularly difficult. Accurate carrier transport characterisation can be achieved by quantitative mobility spectrum analysis of variable-magnetic-field...
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