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The aim of the work was to study the effect of postgrowth thermal annealing processes on the characteristics of the zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering. The growth temperature of the ZnO thin films was fixed at 230degC and then the samples were annealed in dry air atmosphere at 800degC for one hour. The surface of the ZnO samples was analyzed with a scanning...
Photoluminescence and Cathodoluminescence of hydrogenated Silicon Rich Oxide (SRO:H) films were studied. The samples were prepared by Low Pressure Chemical Vapor Deposition (LPCVD) on Si substrates, some samples were thermally annealed at high temperature and hydrogenation was made by low temperature annealing in forming gas. Strong red PL (Photoluminescence) and CL (Cathodoluminescence) in almost...
Cuprous oxide (Cu2O) crystals were grown by the two step crystallization method in air atmosphere conditions from polycrystalline copper plates. The method comprises two stages; in the first one the copper plates are oxidized at 1020degC by some hours in line with its initial thickness. In the second stage the growth of large crystalline areas is promoted by annealing the Cu2O samples at 1100degC...
The specific contact resistivity (rhoC) for Aluminum (Al), Silver (Ag) and Indium (In) metallic contacts on CuInS2 thin films have been determined, from I - V measurements, with the purpose of having the most appropriate ohmic contact for TCO/CdS/CuInS2 solar cells. rhoC was measured using the transmission line (TLM) method for the metallic contacts evaporated on CuInS2 thin films deposited by spray...
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