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Optical characterization of a novel type of semiconductor microcavity based on a fully-buried, all-epitaxial design reveals many properties essential for a manufacturable technology. We demonstrate detailed mode-imaging, lasing, as well as a sizeable Purcell effect.
Mapping the spatial and spectral resonant modes of wavelength-scale planar-hemispherical microcavities demonstrates that they have Laguerre-Gauss symmetry. However the spectral ordering of transverse modes confounds expectations from the paraxial approximation.
We use the finite difference time domain method (FDTD) to investigate polarisation control of single-photon emission from single quantum dots confined in elliptical micro-pillar microcavities. In contrast to circular pillars, one of the cavity modes has smaller modal volume and maintains high Q-factor.
A 5.1 nm thick film of high oscillator strength J-aggregated dye, which gives rise to strong optical coupling, critically couples to a single dielectric mirror, absorbing 97% of incident light (effective absorption coefficient of 6.9 times 106 cm-1).
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