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Using terahertz magneto-photoconductive spectroscopy, we investigate impurity migration effects in barrier-doped GaAs/AlGaAs quantum wells. A new segregation decay rate for Si impurities in AlGaAs is determined for samples fabricated at low epitaxial growth temperature.
We map a laserpsilas internal temperature structure for the first time, identifying separate heat sources due to contact heating and nonradiative recombination and using this technique to compare degradation mechanisms for GaAs-based and Si-based lasers.
Single photon detection and imaging have recently received significant attention in applications such as quantum and bio-imaging, sensing, and communication where ultra high sensitivity and low intensity noise are critical. In this paper, single photon array detectors with built-in negative feedback mechanism are reported. Both the single photon sensitivity and a greatly suppressed intensity noise...
Homoepitaxially grown InAs quantum dot structures were transferred to Si substrates using oxidation lift-off technology accompanied by direct hydrophilic bonding with Si. Electroluminescence with injection through the substrate and photoluminescence data are presented.
We report lasing of optically pumped Ga(AsNP)/GaP multiple quantum-well structures grown pseudomorphically on GaP substrate. A distinct threshold behaviour is observed at both cryogenic and room temperature; modal gain of up to 20 cm-1 is determined.
Critical diameter of nanowires (NWs) grown on a lattice-mismatched substrate by MOCVD was experimentally determined to be inversely dependent on mismatch. Quantization effect is observed with narrow and blue-shifted micro-photoluminescence for InP NWs on Si.
A Si laser with a Si micro-disk evanescently coupled to a III-V gain medium is proposed. The III-V also functions as a DBR at the gain wavelength to minimize the perturbation of the cavity mode.
We present time-resolved reflectivity spectra of optically, homogeneously switched photonic crystals. We observe large, ultrafast shifts of stopbands of GaAs/AlAs multilayer structures as well as in the photonic bandgap range of 3D Si inverse opals.
Intensity of second-harmonic generation from 3D photonic crystals fabricated from opal templates impregnated by gallium nitride and silicon shows pronounce enhancement for wavelength and angles of incidence corresponding to efficient nonlinear diffraction along the Lambda direction.
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