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We report on strong coupling between a discrete optical mode of a high-Q micropillar cavity and single excitons of self assembled In0.43Ga0.57As quantum dots and compare the results with previous studies on In0.3Ga0.7As quantum dots.
Preliminary measurements of the electron spin relaxation rate (T1) in charged GaAs quantum dots are made using a nonlinear optical phase-modulation spectroscopy technique. T1 approaches 46 musec at zero magnetic field.
Electronic and optical properties of self-assembled InN/GaN quantum dots are investigated using a tight-binding model combined with full-configuration interaction calculations. Multi-exciton spectra are discussed. Dark exciton and biexciton ground-states are found for small quantum dots.
We report lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. Single-photon photoluminescence emission has been observed from this quantum dot molecule and the level of coupling can be controlled using a static electric field.
Direct measurement of the absorption of an ensemble of InGaAs quantum dots using a heterodyne multibounce technique reveals that the saturation fluence decreases dramatically with decreasing temperature. The dependence is attributed to homogeneous linewidth narrowing.
Homoepitaxially grown InAs quantum dot structures were transferred to Si substrates using oxidation lift-off technology accompanied by direct hydrophilic bonding with Si. Electroluminescence with injection through the substrate and photoluminescence data are presented.
We report the first experimental characterization of the room temperature gain dynamics of InAs quantum dash optical amplifiers operating at wavelength of 1550 nm. A gain recovery time of 150 ps was observed.
We realized a high density, uniformity and quality InAs quantum dot structure at 1.3 mum with for optical devices that employs a dimeric arsenic source and a gradient composition strain reducing layer.
A general non-Markoffian theory is developed to calculate the electron spin decoherence time in a single quantum dot. Dependence of the decoherence time on the temperature and magnetic field is clarified and compared with experiments.
Electron spin coherence in self-assembled (In,Ga)As/GaAs quantum dots has been studied by pump-probe Faraday rotation experiments. Several aspects such as creation of spin coherence, spin dephasing, interaction with lattice etc nuclei will be discussed.
The spin relaxation within the radiative doublet of the exciton ground state in InAs/GaAs quantum dots is studied via ultrafast spectral hole burning spectroscopy. A biexcitonic resonance emerges due to relaxation of the exciton spin.
Polaron dephasing processes are investigated using far-infrared degenerate four wave mixing. Long (~80 ps) dephasing times are measured and a clear change from phonon-mediated to Auger-mediated dephasing is observed as the dot carrier population increases.
The role of polarons in the quantum kinetics of carrier-phonon interaction is emphasized. Scattering processes involving polarons allow ultrafast relaxation even if the phonon energy is not resonant with the electronic transitions.
We use the finite difference time domain method (FDTD) to investigate polarisation control of single-photon emission from single quantum dots confined in elliptical micro-pillar microcavities. In contrast to circular pillars, one of the cavity modes has smaller modal volume and maintains high Q-factor.
Polarisation-entangled photon pairs are generated from single InAs quantum dots. This is achieved by restoring the degeneracy of the exciton level with an in-plane magnetic field or by careful selection of the dot.
We demonstrate an efficient source of nearly indistinguishable single photons from an InAs quantum dot coupled to a photonic crystal microcavity. This QD-cavity coupled system has applications in quantum information science.
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