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With 3-pulse wave-mixing ultrafast spectroscopy we probe simultaneously the intra and inter-band coherent dynamics in GaAs/AlGaAs quantum wells in a perpendicular magnetic field. By comparing to theory, we identify the role of inter-Landau-level coherences.
Spin gratings lasting longer than the carrier lifetime are measured in lightly n-doped quantum wells. In a magnetic field, precession of the grating is observed, and diffusion rates are determined by varying the grating period.
The magnetic field orientation dependence of the terahertz radiation intensity from GaAs/AlGaAs modulation-doped structures with varying spacer thickness was investigated. Results are analyzed in the context of junction electric field, carrier mobility, and interface roughness.
We observed highly non-thermal features from the photoluminescence of InGaAs/GaAs quantum dots in a planar microcavity. The effect was interpreted in terms of the interplay of phonon relaxation and cavity-dependent excitonic radiative recombination.
We investigated many-body and radiative coupling effects on intersubband Rabi oscillations in a multiple quantum well system. Under certain conditions, radiative coupling is the dominating effect, yielding distinctively different excitation behaviors in the wells.
The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne pump-probe measurements with 150 fs resolution. A 13 ps gain recovery time was found, promising for all-optical signal processing.
The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the sub-picosecond lifetimes of these materials.
We report the first experimental characterization of the room temperature gain dynamics of InAs quantum dash optical amplifiers operating at wavelength of 1550 nm. A gain recovery time of 150 ps was observed.
The spin relaxation within the radiative doublet of the exciton ground state in InAs/GaAs quantum dots is studied via ultrafast spectral hole burning spectroscopy. A biexcitonic resonance emerges due to relaxation of the exciton spin.
Terahertz (THz) radiation from p-type (100) InAs was investigated using time domain spectroscopy. Azimuthal angle dependence measurements and the ambipolar mobility theory suggest the dominant THz radiation mechanism to be that of the surge current.
Femtosecond two-color pump-probe experiments on intersubband absorption spectra of electrons in a GaN/AlN superlattice show distinct spectral holes unraveling both the homogeneous broadening contribution and the underlying optical phonon progression.
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