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We present a microscopic interpretation of recent differential transmission measurements of electron spin coherence in GaAs quantum wells. We show that certain unexpected features in the beat signal can reveal finer characteristics of excitonic correlations.
Recovery of electrons from excited neutral donor states in GaAs is time-resolved using a novel optical readout technique and pulsed terahertz excitation. Long (0.1-1 mus) 2P state lifetimes are measured at various magnetic fields.
We demonstrate characteristics of InAs/GaAs quantum-dot photonic-crystal lasers with high spontaneous emission coupling efficiencies and soft-turn-on behaviors. Pronounced bunching signals subside with the increase of pumping, revealing the onset of lasing operations.
Electronic and optical properties of self-assembled InN/GaN quantum dots are investigated using a tight-binding model combined with full-configuration interaction calculations. Multi-exciton spectra are discussed. Dark exciton and biexciton ground-states are found for small quantum dots.
We report lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. Single-photon photoluminescence emission has been observed from this quantum dot molecule and the level of coupling can be controlled using a static electric field.
We present a comprehensive many-particle theory for optical refrigeration of bulk GaAs via luminescence up-conversion. We predict cooling in the regime of a partially ionized exciton gas and discuss its temperature dependence.
The spin relaxation within the radiative doublet of the exciton ground state in InAs/GaAs quantum dots is studied via ultrafast spectral hole burning spectroscopy. A biexcitonic resonance emerges due to relaxation of the exciton spin.
Experimental studies of nearly degenerate time-resolved Faraday rotation (TRFR) in GaAs and InGaAs quantum wells show that many body interactions between excitons strongly modify the TRFR response from the electron spin coherence.
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