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We have demonstrated that two-photon absorption in a 2-cm-thick bulk GaP crystal can be the mechanism for limiting the efficient generation of the ultrafast broadband THz pulses using short infrared laser pulses.
We demonstrate a muW-level broadly tunable THz source based on parametric down-conversion in orientation-patterned GaAs pumped by femtosecond pulses from a Tm-doped fiber laser. Generated THz powers should be scalable to mW-levels with this approach.
We demonstrate efficient generation of narrow-bandwidth THz waveforms in optically-contacted multi-layer and orientation-patterned GaAs, using optical rectification of 2-4 mum, 100-fs pump pulses. THz waveforms were directly measured using two-color time-domain spectroscopy.
We show that a guided-wave approach to Fresnel phase-matching is relevant even for thick semiconductor wafers. This approach is implemented to design a bulk GaAs optical parametric oscillator and a terahertz generator by difference-frequency generation.
An ultrabroad infrared continuum can be produced using optical parametric generation (OPG) in quasi-phasematched GaAs. Spectra over an octave wide, spanning 4.5 to 10.7 microns, measured 20 dB down from the peak, have been observed.
An optically-pumped VECSEL based on AlGaInP produced >1W continuous-wave output power at 675 nm and wavelength tuning over 16 nm. Intra-cavity second-harmonic generation was achieved in beta-barium borate to produce 60 mW at 337 nm in two output beams.
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