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Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300 nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation.
We have theoretically estimated optical isolation of larger than 30 dB in Co-InGaAsP semiconductor active optical isolators based on nonreciprocal phase shift. The length of the nonreciprocal phase shifting region is as short as 1.3 mm.
We demonstrate the reduced spectral blue shift in increasing injection current of an InGaN/GaN quantum-well light-emitting diode with prestrained growth and show that this effect is stronger when the prestained GaN barrier layer is thinner.
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.
Angular and spectral reflectivities of GaN nano-pillar structures are investigated for heights of 350 nm, 550 nm and 720 nm. Calculations based on rigorous coupled-wave analysis show excellent agreement with the measured reflectivities for s- and p-polarizations.
The authors report on the spectroscopy and laser results of diode pumped Pr-doped fluorides. We obtained efficient laser emission in the visible range with LiYF4, LiLuF4 and LiGdF4 crystals.
We report the lasing behaviors of a GaN defect photonic crystal membrane structure. The high Q factor and low threshold condition show the effective photon confinement with the full photonic band gap structure.
The azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for light propagating in GammaX direction and 2.1 for GammaM direction.
A hexagonal array of sub-micron sized holes was fabricated on InGaN/GaN quantum-well light-emitting diodes using nanoimprint lithography. Photoluminescence measurement confirms that light extraction of the LED was enhanced with two-dimensional photonic crystal patterns.
By investigating dependence of THz output power on pump polarization, ratios of elements for second-order nonlinear susceptibility tensor have been measured for GaSe, which significantly deviate from those dictated by Kleinmanpsilas symmetry and structural symmetry.
We achieved a record high index sensitivity of 400 nm/RIU in a cw photonic crystal nanolaser with a potential spectral linewidth of 0.1 pm order. We also demonstrated spectrometer-free sensing utilizing nanolaser array.
We experimentally demonstrate significant reductions and spectral oscillations in THz coherent-phonon reflectivity at GaN-water interfaces. Our results indicated that the nanoscaled interfacial structures and water molecular resonances are responsible for the observed specular coupling characteristics.
We report on a first successful operation of current-driven GaN photonic-crystal surface-emitting laser, which can operate in blue-violet wavelength regions at room temperature.
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
We report multi-watt, TEM00 emission from a 2 mum Sb-based optically-pumped semiconductor disk laser utilising an intra-cavity diamond heat spreader for thermal management. An output power of 5 W and a wide tunability of over 160 nm are achieved.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
Raman coherence between heavy-hole and light-hole excitons in quantum wells is isolated in an alternative spectrum and contributions from single exciton and correlated two-exciton states are studied experimentally and theoretically by excitation with different polarizations.
Critical slowing down (CSD) phenomenon was observed experimentally in InGaAsP-InP nonlinear photonics crystal resonator. The hallmark of CSD is the occurrence of the output transmission in the unstable state for a long time before switching.
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