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An InGaAs/InGaAsP microdisk laser is assembled on silicon using lateral-field optoelectronic tweezers, achieving room-temperature pulsed operation with a threshold power of 0.85 mW. The room-temperature assembly enables a post-CMOS process to fabricate micro-lasers on silicon.
We calculate that strain and confinement effects lead to similar conduction and valence density of states in InGaAsP quantum dashes. Room temperature threshold remains dominated by non-radiative recombination, as in 1.5 mum quantum well lasers.
We demonstrated nanostructured semipolar III-nitride light emitters on low cost c-plane GaN templates using one-step epitaxy. The total light emission efficiency is improved by a factor of 2.6 compared to polar emitters at room temperature.
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