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We demonstrate a 2.3 mum emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction.
We demonstrate ultrafast self- and cross-absorption saturation and self-phase modulation based on near-infrared intersubband transitions in GaN/AlN quantum-well waveguides designed to minimize the nonlinear switching energy.
We present time-resolved photoluminescence on InGaN/GaN multiple-quantum well LEDs grown on nonpolar and semipolar bulk GaN substrates and investigate increasing indium concentrations toward higher power, longer wavelength light emitters.
Time-resolved electro-absorption is reported for the first time in a GaInNAs quantum well p-i-n waveguide at 1.3 mum. A recovery of 55 ps demonstrates the potential for optical modulator devices.
Optimization studies of InGaN quantum wells light emitting diodes employing SiO2/polystyrene microlens arrays are conducted. The use of microlens arrays leads to increase in light extraction efficiency by 2.7-times, in agreement with simulation.
Micro-photoluminescence from GaN/InGAN multiple quantum wells embedded in a nano-pillar structure with a diameter of 300 nm is characterized. The emission spectrum shows a blue shift of 68.3 meV in energy due to strain relaxation.
We demonstrate the reduced spectral blue shift in increasing injection current of an InGaN/GaN quantum-well light-emitting diode with prestrained growth and show that this effect is stronger when the prestained GaN barrier layer is thinner.
We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.
A hexagonal array of sub-micron sized holes was fabricated on InGaN/GaN quantum-well light-emitting diodes using nanoimprint lithography. Photoluminescence measurement confirms that light extraction of the LED was enhanced with two-dimensional photonic crystal patterns.
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
Raman coherence between heavy-hole and light-hole excitons in quantum wells is isolated in an alternative spectrum and contributions from single exciton and correlated two-exciton states are studied experimentally and theoretically by excitation with different polarizations.
We assess the non-radiative recombination mechanisms in GaInNAsSb structures by comparing p-doped, n-doped and un-doped material. Our results indicate a contribution from thermally activated leakage in 1.55 mum GaInNAsSb Quantum well lasers at elevated temperatures.
Three-pair AlGaN/GaN multiple quantum well structure with superlattice was grown using metal-organic chemical vapor deposition system. The AlGaN barrier and GaN well of the MQW were grown by atomic layer deposition and conventional growth, respectively.
We observe the enhancement of photoluminescence excitation through the coupling of an InGaN/GaN quantum well (QW) with surface plasmons which are generated on an Ag nanostructure deposited on the SiN-coated QW epitaxial sample.
We have evidenced hot and cold longitudinal-optical (LO) phonons induced by electric field and resonant Raman scattering in GaN/AlN triangular quantum well, probed by first-order and second-order resonant Raman scattering of 3-ps light pulses.
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