The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. Such unique characterization plays a significant role in identifying candidate samples for laser cooling.
By incorporating GaAs/AlGaAs based uni-traveling-carrier photodiodes with broadband micromachined monopole antennas, the demonstrated photonic-transmitter can radiate strong sub-THz pulses (20mW peak-power) with a wide bandwidth (100~250GHz), which was measured by another photonic-receiver for ultra-wideband communication.
High Q-factor (~60,000) whispering gallery modes are observed from GaAs based micropillar cavities with embedded InAs quantum dots. Low threshold lasing is observed in WGMs near to the peak of the QD ensemble.
Time-resolved electro-absorption is reported for the first time in a GaInNAs quantum well p-i-n waveguide at 1.3 mum. A recovery of 55 ps demonstrates the potential for optical modulator devices.
We describe the operation of a femtosecond Cr4+:YAG laser that has been mode locked using a novel GaInNAsSb SESAM. 230 fs pulses were generated at an average output power of 280 mW.
We have theoretically estimated optical isolation of larger than 30 dB in Co-InGaAsP semiconductor active optical isolators based on nonreciprocal phase shift. The length of the nonreciprocal phase shifting region is as short as 1.3 mm.
We achieved a record high index sensitivity of 400 nm/RIU in a cw photonic crystal nanolaser with a potential spectral linewidth of 0.1 pm order. We also demonstrated spectrometer-free sensing utilizing nanolaser array.
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
Raman coherence between heavy-hole and light-hole excitons in quantum wells is isolated in an alternative spectrum and contributions from single exciton and correlated two-exciton states are studied experimentally and theoretically by excitation with different polarizations.
Critical slowing down (CSD) phenomenon was observed experimentally in InGaAsP-InP nonlinear photonics crystal resonator. The hallmark of CSD is the occurrence of the output transmission in the unstable state for a long time before switching.
The dependence of waveguiding loss on the magnetization of Fe pillar embedded into (Al,Ga) As optical waveguide was studied. The optical reading of the magnetization direction of Fe pillar was demonstrated for the pillar size of 3 um times 4 um and 3 um times 8 um with signal-to-noise ratio of 4.8 dB and 6 dB, respectively. This results demonstrates feasibility of using the magnetization dependent...
We demonstrate the lasing characteristics of a photonic crystal heterostructure cavity. Feedback to slow Bloch modes using a heterostructure confinement design produces single mode lasing at 1551 nm.
We report the first high-current photodiode based on the slab-coupled optical waveguide concept. The device has a large mode (5.8 times 7.6 mum) and ultra-low optical confinement (Gamma ~ 0.05%), allowing a 2-mm absorption length. The maximum photocurrent obtained was 250 mA (R = 0.8-A/W) at 1.55 mum.
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
Second harmonic generation (SH) based on the enhancement of localized fields confined in nanoscale periodic, GaAs-filled holes in a metal film is presented. The SH saturates for a fundamental peak power intensity Gt 20 GW/cm2.
We report TM polarized 808-nm lasers bars with 69.5% efficiency at 15degC. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity to packaging induced stress.low-strained quantum well,packaging induced stress.
We developed 1.1-mum-range oxide-implant VCSELs with InGaAs/GaAsP strain-compensated MQWs. 25 Gbit/s-100degC error-free operation and high reliability over 3000 hours under 150degC operation were successfully demonstrated.
We report a Franson-type experiment where two single photons from an InGaAs/GaAs quantum dot in a pillar micro-cavity reach two different, spatially separated 2-by-2 couplers at the same time and interfere with high visibility.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.