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We observe polarized terahertz emission from nonpolar gallium nitride due to an in-plane polarization terminated by stacking faults. A measured flip of the THz waveform polarity agrees with carrier transport in an in-plane electric field.
Ultrafast wavelength-tunable optical measurements on semiconductor nanowires allow us to independently probe the dynamics of electrons, holes, and defect states. These investigations reveal the influence of two-dimensional confinement on carrier dynamics in these nanosystems.
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