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We describe the operation of a femtosecond Cr4+:YAG laser that has been mode locked using a novel GaInNAsSb SESAM. 230 fs pulses were generated at an average output power of 280 mW.
We report multi-watt, TEM00 emission from a 2 mum Sb-based optically-pumped semiconductor disk laser utilising an intra-cavity diamond heat spreader for thermal management. An output power of 5 W and a wide tunability of over 160 nm are achieved.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We demonstrate the lasing characteristics of a photonic crystal heterostructure cavity. Feedback to slow Bloch modes using a heterostructure confinement design produces single mode lasing at 1551 nm.
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
We present for the first time a high-power Ho:YAG laser in-band pumped by a (AlGaIn)(AsSb) laser diode stack with 1910 nm centre wavelength. Using a single 60 mm long Ho:YAG rod in a simple and compact plane-plane resonator geometry a maximum laser output power of 40 W and a slope efficiency of 57% with respect to the absorbed pump power were obtained. A beam quality of M2 < 4 was found.
Single-mode, continuous-wave, electrically-injected, GaSb based, 2.1 mum, equilateral-triangle-resonator lasers with a wavelength tuning range of 3.25 nm are demonstrated at 77 K.
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