The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A delay-bandwidth product of 10.7 is achieved using ultra-fast intraband nonlinearities in semiconductor optical amplifiers to generate fast light. A novel chirped-pulse scheme enhances the fast light effect and generates delays in addition to advance.
We give an overview of slow and fast light effects in semiconductor waveguides. Experimental and theoretical results are presented, emphasizing the physics as well as the limitations imposed by the carrier dynamical processes.
Chirp analysis of color-less RSOA transmitter with 2-3 ASE injection-locked modes for 1.25 Gb/s metropolitan WDM-PON network reaching BER of 10-9 under receiving power below -29.5 dBm and power penalty of <0.1 dB after 25 km transmission is demonstrated.
The authors theoretically analyze and interpret an effective mechanism, which employs optical filtering to enhance the microwave phase shift that can be achieved in semiconductor optical amplifiers based on slow and fast light effects.
TM-mode waveguide optical isolators consisting of semiconductor waveguides with ferromagnetic MnX (X = As, Sb) layers were developed. The device with a MnSb layer had an isolation ratio of 12 dB/mm in the wavelength range 1530-1555 nm.
We report on ultra-fast small signal sinusoidal cross-gain modulation using quantum dot semiconductor optical amplifiers exceeding a 40 GHz bandwidth in frequency and 40 nm in the wavelength domain.
We present a multiwavelength, time-division multiplexed laser that continuously cycles through 10 stable, tunable and spectrally narrow wavelengths at 30 kHz for absorption measurements in the R-branch of the v1+n3 band of H2O (1330-1380 nm).
We propose a SOA with a tunnel injection structure and analyze the operation properties. High-speed carrier recovery was suggested in the tunnel-injection SOA. The results indicate tunnel-injection SOAs have a potential of high-speed operation.
In this paper we demonstrate wavelength-conversion, of a message masked by additive chaos, along a transmission line. This result shows that chaos-based communications are compatible with channel-switching and wavelength-conversion as required in reconfigurable networks.
Phase-sensitive amplification of picosecond optical pulses was demonstrated using an SOA as the nonlinear medium inside a Sagnac interferometer with a weak control signal. Numerical simulations using a semiconductor amplifier model are consistent with experiments.
We experimentally demonstrate uncompensated WDM transmission over a 470 km hybrid fiber link using two versions of duobinary and in-line SOA amplification. MLSE receiver technology partially mitigates the accumulated dispersion of approximately 3300 ps/nm.
We report an all-optical clock recovery technology using nonlinear polarization rotation of reflective semiconductor optical amplifier. Clock amplitude jitter of the recovered clock is lower than 1.5% over a 25 nm tuning range.
We demonstrate amplification of picosecond pulses centered at 1550 nm using slab-coupled waveguide amplifiers. For bias currents less than 1 A, we obtained a maximum unsaturated gain of 12.3 dB and a pulse saturation energy of ~50 pJ.
We propose a systematic way for analyzing gain-recovery dynamics in semiconductor optical amplifiers using a multiple-scale analysis and show that the resulting analytical solution for the amplified pulse agrees well with numerical solutions.
This paper highlights the potential of an integrated 2times2 quantum dot switch for uncooled switching applications. High gain of 11.6 dB and <0.6 dB power penalty over lldB dynamic range is demonstrated at temperatures up to 70degC.
This paper proposes a scheme to achieve high-speed all-optical non-return-to-zero to phase-shift keying (NRZ-to-PSK) conversion by using the linear filtering in the silicon ring resonators. Simulation results are provided to verify the feasibility.
Two-wave mixing in a broad-area semiconductor amplifier with moving gratings is investigated. It is shown that depending on direction of the moving gratings and the anti-guiding parameter the optical gain may increase or decrease.
A semiconductor laser, using only a tapered amplifier as gain medium, is mode-locked with a multiple quantum well saturable absorber and RF modulation, generating 0.5 ps pulses without dispersion compensation.
We characterize a silicon based wavelength converter using a commercial semiconductor amplifier based wavelength converter as a benchmark. Results show that silicon achieves -5.5 dB efficiency, offers broader conversion bandwidth, higher OSNR and negligible channel crosstalk.
We experimentally demonstrate a scheme for reshaping 40 Gb/s packets that is wavelength-preserving. The scheme, based on cross-gain-compression in an SOA, is polarization-independent and does not suffer from any transient effect at packet edges.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.