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We demonstrate critically coupled silicon microring resonators with intrinsic Q close to 300,000 and mode volume Vap20times(lambda/ne)3. For sub-mW optical power, large pump induced resonance shifts were observed for applications in all-optical switching.
We present the first full theoretical and numerical analysis of the influence of the waveguide geometry and intrinsic material frequency dispersion of the nonlinearity, on the Si wires effective third-order nonlinearity and its frequency dispersion.
We demonstrate a bowtie geometry in a silicon planar resonator with an ultra-small modal volume .01(lambda/2n)3. Bowtie, ring resonators and 1D and 2D photonic crystal resonators are compared for tradeoffs in confinement and quality factors.
We have performed temperature-dependent resistivity measurements of silicon after doping with sulfur via femtosecond laser irradiation. Results are consistent with a theoretically predicted binding energy for sulfur donors of 100 meV below the conduction-band edge.
Scheme to realize controlled phase gate through single quantum dot in slow-light silicon photonic crystal waveguide is proposed. Enhanced Purcell factor and beta-factor lead to high gate fidelity over broadband frequencies compared to cavity-assisted system.
We demonstrate that the optical characteristics of silicon photonic crystals can be modified by hydrogen annealing. Hydrogen annealed PCs show reduced surface roughness and improved structural uniformity, leading to increased reflectivity and sharper resonance peaks.
We observe experimentally all-optical analogue to electromagnetically induced transparency with silicon photonic crystal nanocavities having high intrinsic quality factor and small modal volume. This phenomenon is analyzed through coupled-mode formalism and three-dimensional finite-difference time-domain method.
Blue and yellow electroluminescence of MOSLEDs made on Si-rich SiOx with buried Si nanocrystals of different sizes controlled with minimum hydrogen passivation are demonstrated by PECVD at different N2O/SiH4 ratio and total fluence.
We demonstrate superluminal pulse propagation on a silicon chip using an all -optical analog to electromagnetically induced absorption created by the coherent interaction between two micro-resonators. We show group indices tunable between -1158 and -312.
We fabricate horizontal slot waveguides and resonators using layers of polycrystalline and single crystalline silicon. We demonstrate waveguide propagation losses of 7.3 dB/cm and ring resonators with an intrinsic quality factor of 76,000.
Quasi-TM-mode propagation loss of 1.83 dB/cm at lambda = 1.565 mum is achieved in horizontal Si(amorphous)-SiO2-Si(crystalline) slot waveguides with 8.3 nm slots fabricated on silicon-on-insulator. Waveguide loss is measured using a ring resonator with Q ~ 3x105.
We demonstrate on-chip absorption spectroscopy using silicon microring resonators with integrated microfluidic channels. Using a 40 mum radius resonator with Q>15,000 we show absorption spectra of less than 90 nL volumes of water and methanol from 1460 nm-1560 nm.
We demonstrate strongly enhanced optical trapping forces on sub-micron-diameter dielectric spheres within a pressure-driven microfluidic flow of several hundred mum/s using the evanescent field of the light in silicon waveguides.
We present a comprehensive study of silicon Mach-Zehnder modulators based on carrier injection. Detailed comparisons between simulation results and measurements are made and excellent agreement is obtained for DC and AC characteristics.
We demonstrate scalable Si nanowire photodetectors that function as phototransistors. Etched planar and vertical Si nanowire photodetectors have been fabricated and characterized, showing high (>35,000) internal gain under UV illumination.
We show cascaded silicon microring resonators with 1.5-mum radius critically coupled to a narrower waveguide. A coupled Q of 9,000 is achieved. Devices are fabricated with the widely-available SEM-based lithography system using a stitching-free design.
The quantum-confined Stark effect demonstrated in Si-Ge/Ge quantum wells promises integration of optics with silicon ICs. Using photocurrent, tunneling resonance and nonparabolicity, we propose more accurate values of key parameters for device design.
We demonstrate a novel time lens based on four-wave mixing in a silicon nanowaveguide. The lens is used for 20times temporal magnification of a signal with 3-ps features, which permits measurement by a 20-GHz detector.
A hybrid laser diode consisted of Si slab waveguide and III-V ridge waveguide has been investigated. This structure is efficient for enhancing the confinement factors in the silicon region and the III-V active region simultaneously.
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