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A nanomembrane is a new MEMS/NEMS structural component. Most nanomembrane structures consist of a free-standing element, with a mean thickness between 5 and 30 nm. In contrast to its thickness, the lateral dimensions of a nanomembrane are in the range of 3 to 5 mm. In this paper, the fabrication of a new type of nanomembranes with a thickness of approximately 20 atomic layers and with a large area...
Quantum dot structures, where electrons are confined three-dimensionally in the below 10 nm scale, show characteristics quite different from conventional bulk structures. Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible...
Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon- rich silicon nitride (SRN) via the phase separation reaction. The silicon rich nitride films were deposited by low-pressure chemical-vapor deposition (LPCVD) and high temperature annealing. At sufficiently high temperatures, nanocrystallites are formed as a result of phase separation effect...
One of the major challenges for the development of new tools for biological analysis relies on the ability to design advanced surfaces with appropriate surface chemistries and topography from micrometers down to few nanometers. For instance, structuring surfaces with adhesive and non adhesive zone in order to preferentially guide the cell growth is one of the most interesting tools for the development...
A quantum mechanical simulation of dissipative transport in nano n -n-n quantum wires and nano structures with two-dimensional infinite cross section is presented. The simulation is carried out within the non-equilibrium Green's function method (NEGF). Scattering is taken into account using a simple phenomenological model.
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