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In flip-chip package, the mismatch of thermal expansion coefficients between the silicon die, copper heat spreader and packaging substrate induces concentrated stress field around the edges and corners of silicon die during assembly, testing and services. The concentrated stresses result in delamination on various interfaces involving a range of length scales from hundreds of nanometers to millimeters...
A series of studies have been conducted for mechanical behavior of elastic thin films on compliant substrates. Under tension, the film may fracture by growing channel cracks. The driving force for channel cracking (i.e., the energy release rate) increases significantly for compliant substrates. Moreover, channel cracking may be accompanied by interfacial delamination. For a film on a relatively compliant...
The main purpose of the thermal interface material (TIM) is to conduct the heat from the die surface to the Ni finish Cu heat spreader. The key requirement for a reliable package is TIM thermal conductivity or thermal interfacial resistance and bond line thickness (BLT). Additional important parameters are modulus, ability to either be dispensed, low volume manufacturing (LVM) or screened, HVM (high...
The objective of this paper is presenting two energy based failure criteria and applying them in reliability simulations of Complementary Metal Oxide Semiconductor (CMOS) structures. Of particular interest are the Back-End-Of-Line (BEOL) interconnect layers and their interfaces. It is an accepted fact that process-induced flaws due to a mismatch in the Coefficients of Thermal Expansion (CTE) of the...
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