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Fabrication process of phase controlled FUSI (PC-FUSI)/HfSiON gate structure for small SRAM cells formation is proposed. The critical issue is controlled NiSi/Ni3Si boundary formation between the N-FET and P-FET gate electrode within a narrow STI region with wide process margin. This was realized by adopting a hard mask process to selectively form N/P-FET FUSI under tuned sintering condition. Suitable...
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