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Here we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal shear stress sensor for turbulent flow measurements based on aluminum hot-film as a sensing element. These devices have been fabricated using commercial 1 mum SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step, offering low cost and the option...
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