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An efficient on-chip antenna structure in CMOS technology for system in package integration is presented. The antenna consists of a slot radiator on the top metal layer of the technology coupled to a rectangular dielectric resonator above the slot. The cavity backed slot configuration is used to isolate the antenna from the substrate. This configuration blocks the antenna interference through the...
Design and measurements of a room temperature 700 MHz - 1400 MHz low noise amplifier (LNA) in 90-nm bulk CMOS, intended for use in the Canadian large adaptive reflector (CLAR) radio telescope, are presented. The new bandwidth constrained LNA noise figure optimization and broad-banding technique as well as the importance of substrate shielding are discussed. The amplifier has 0.35 dB noise figure while...
This paper presents, for the first time, a MEMS-enabled dual-band receiver front-end in 0.13-mum CMOS, which covers both 1.8-GHz and 5-6-GHz bands. A packaged MEMS series switch is used to tune the LNA's input impedance for narrow-band matching in each of these bands. The mixer of the front-end is a double-balanced folded Gilbert cell, which is followed by a programmable current-output stage. The...
A multistandard RF front-end using a tunable interstage matching network is designed in 0.25 mum CMOS technology. It consists of a wideband LNA, interstage matching network, and a Gilbert-cell mixer. Tunability of the interstage matching can be obtained by a MOS varactor. It can change tuning frequency by controlling capacitance of varactor. Gain can be flattened over whole target band by the proposed...
Notice of Violation of IEEE Publication Principles"A 10GHz 0.11 μm CMOS Varactor-less LC-VCO for Multi-Standard 802.11a/b/g WLAN Using High Resolution Frequency Calibration"by Maxim, A.in the Proceedings of the 2007 IEEE Radio and Wireless Symposium,Jan. 2007 Page(s):189-192After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication...
The design of millimeter-wave CMOS voltage-controlled oscillators (VCOs) is reviewed. A low parasitic cross-coupled transistor layout is developed, and used to demonstrate a 140-GHz fundamental mode VCO in 90-nm CMOS and a 192-GHz push-push VCO in 130-nm CMOS. These are the circuits with the highest fundamental and harmonic operating frequencies achieved in silicon integrated circuits
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