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Using single-crystal Bi2S3 nanowires, we successfully fabricate nanodevices on Si substrate by e-beam lithography. Field-effect as well as novel optoelectronic properties have been obtained from the devices. Under visible or UV light illumination, the conductivity of Bi2S3 nanowire raises several to several orders times within milliseconds due to the generation of electron-hole pairs. Illuminating...
A comparative study of the micro-tribological properties of silicon-based component and octadecyltrichlorosilane (OTS) molecular lubricant film which was prepared on Si(100) substrate, and their adhesive and tribological properties were mainly investigated by AFM/LFM. Meanwhile, the effect of relative humidity and scanning velocity was taken into consideration. The results show that the adhesive force...
This paper reports the theory, fabrication and testing of a novel uncooled infrared (IR) sensor using amorphous silicon thin film transistors (a-Si TFTs) as the active elements. The measured temperature coefficient of the channel current (TCC) of the a-Si TFT is about 4.18%/K at room temperature. What's more, finger-cross TFT is designed, which can greatly improve the detectivity of uncooled infrared...
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