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Silicon nanostructures were fabricated by a natural lithography technique, with sizes far beyond the limit of conventional, by a self-organizing gold colloidal particle monolayer as an etch mask. The silicon nanostructures with high density and uniformity in height and shape were obtained using reactive ion etching (RIE). The uniform spatial distribution of the Si nanostructures can also be obtained...
Si based Ge quantum dot infrared photodetector (QDIP) has the potential of being a serious candidate for applications in optical fiber communications. In this paper, 20 periods of stacked Ge quantum dots were grown on Si(100) by gas source molecular beam epitaxy (GSMBE). Using the stacked quantum dots as active region, a P-I-N structure quantum dot infrared photodetector was fabricated. To improve...
Lack of batch-compatible fabrication techniques can be considered as the most important challenge in the integration of nanostructures with microelectromechanical systems (MEMS). A solution to the micro-nano integration problem is offered by introducing a batch-compatible nanowire fabrication technique based on basic lithographic techniques and guided self-assembly. The basic principle is obtaining...
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