In this paper, a high gain boost converter based on the voltage-lift technique is proposed. The converter is composed of basic quasi-Z-source cell and a voltage-lift cell which contains one capacitor, two inductors and diodes. Contrasted with the traditional quasi-Z-source DC/DC converter, a relatively high voltage conversion and the reduction of the input current ripple can be achieved with the presented boost converter. The derivation of topology is described in detail, then the working principle is analyzed and characteristic is introduced. At last, the proposed boost converter is validated to be feasible and reasonable based on the simulation and experimental results analysis.