Now hemispherical geometry is used for designing insensitive to the hole transport single polarity CdZnTe detectors. In this work, theoretical consideration of the processes in semiconductor hemispherical detectors for low energy X-rays was considered. The formulae for the mean amplitude and the variance of the signal at the output of the semiconductor hemispherical detector were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.