The purpose of this paper is to sum up concerns when designing a gate driver for SiC MOSFETs, and provide two examples. Both of them can detect over current of the power device. One use a gate driver IC and adapt it to meet the requirement of SiC MOSFETs, which is simple and convenient. For better performance in terms of switching frequency and reliability, the other one adopt magnetic transformers to provide the gate signals and the power for the secondary side respectively. The gate driver can work on any duty ratio and meet fast dynamic duty ratio command. A second order R-C network is designed to detect over current of the power device. Experimental comparison shows the latter performs better on propagation delay and coupling capacitance. At last short circuit experiment is conducted and both can survive the experiment.