The design and characterization of a K and Ka band differential four ways power divider/combiner based on Wilkinson like topology, implemented in a 0.25 μm SiGe BiCMOS technology are presented in this paper. The wide band device presents, on the frequency range 20–38 GHz, a transmission coefficient better than −8.6 dB, a 2.6 dB additional loss over the ideal case. The input/output reflection coefficient is better than −10 dB and the isolation between output ports is better than −10 dB. The use of a differential design is very attractive for transmit/receive modules in satellite communication applications when the assembly use bondwires interconnects. In this scenario, the use of a differential power divider instead of a single ended version permits to decrease the losses in the multifunctional monolithic microwave ICs, i.e. the power and the area consumption.