Serious tungsten corrosion after tungsten chemical mechanical planarization (W CMP) is found to correlate to the high via resistance. According to via design layout analysis, the W plug recess is strongly dependent on the underlying metal line area and via hole size. The via W plug recess becomes worse as via size shrinkage and underlying metal line area increasing. The low corrosion W polishing slurry, alkali /acidic buffing slurry and clean chemical are studied. The result indicates that low corrosion W slurry and acidic clean chemical can suppress tungsten corrosion and result in tightened via resistance distribution in 1× nm device product.