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We propose a new spintronics-based memory architecture with 2 MTJs and 4 transistors as a unit cell for high-speed application. The architecture employs spin-Hall effect as a writing principle and voltage-control-magnetic-anisotropy (VCMA) effect as a write speed acceleration. We successfully demonstrated the unique complementary flash-writing scheme and proved a potential of ultrahigh speed writing with the prototype unit-cell and the test-element.