Precise Vg-pulse response of low-voltage FeFETs were systematically investigated for the first time. The FeFETs showed good reproducibility of the Vth values controlled by voltage height, time width, and number of the imposed Vg pulses. Parameter extractions of the static and dynamic ferroelectric characteristics are valuable for modeling the FeFETs and simulating the analog circuits. 10^9 cycle endurance at room temperature and long retention at 85, 120 and 150 ºC were demonstrated using 3.9 V and 10 μs Vg pulses for the erase and the program.