A switchable number of turns, symmetric, parallel stacked, variable width and spacing inductor structure with performance optimized for multi-band operation and an area efficient multi-band voltage controlled oscillator circuit (VCO) are presented. The design of the proposed multi-band inductor structure and the impact of transistor switch parasitics on its quality factor performance are thoroughly discussed. The VCO circuit presented in this work is targeted towards wireless RF communication applications and operates across three frequency bands of 900 MHz, 1800 MHz, and 2.4 GHz, respectively. The VCO circuit is designed and simulated in a 0.18 um silicon on insulator process with a nominal supply voltage of 1.5 V. The presented VCO circuit achieves a phase noise performance of -104.7 dBc/Hz, -107.7 dBc/Hz, and -101.7 dBc/Hz at 1 MHz offsets from carrier frequencies 900 MHz, 1800MHz and 2.4 GHz, consuming currents of 3.8 mA, 4.5 mA, and 5.3 mA, respectively, from a 1.5 V supply.