The newly available Medium Voltage (MV) Silicon-Carbide (SiC) devices enable a great extension of the design space of MV inverters. This includes the utilization of unprecedented blocking voltages, higher switching frequencies, higher commutation speeds, and high temperature operation. However, all these factors considerably increase the insulation stress. This paper details the computation of dielectric losses, which are directly related to the insulation stress and can be used for the insulation design and diagnostic. After a review of the method used to compute dielectric losses, scalable analytical expressions are derived for the losses produced by PWM waveforms of DC-DC, DC-AC, and multilevel DC-AC inverters. Finally, a Medium-Frequency (MF) transformer is analyzed and the impacts of the insulation material and the operating temperature on the dielectric losses are discussed. It is found that the insulation losses can represent a significant share (17%) of the total transformer losses.