The advancement in MEMS technology has triggered the development of small sensing devices such as intracranial pressure sensor. As the intracranial signal is a pulsating type, the sensor must be sensitive enough to detect these changes. Hence, the important parameters of intracranial pressure sensor are the sensitivity and linearity. At present, the sensitivities were within the range of 2 µV/V/mmHg to 0.17 mV/V/mmHg with the smallest sensor size of 500 µm × 500 µm (for adult). This paper presents the improved design of MEMS piezoresistive pressure which aims at achieving higher sensitivity for subarachnoid space microsensor by using the three turns meander shaped piezoresistors. A square diaphragm of 200 µm × 200 µm × 2 µm is set for the sensor. Different piezoresistors configurations were simulated using COMSOL Multiphysics to determine the better sensing outputs. The position of each piezoresistor was based on von Mises stress. By choosing the shape of piezoresistor that occupies most of the high stress region, the change in resistance per pressure will be higher. The design which consolidates the three turns and zero turn meander shaped piezoresistors was found to be the best with the sensitivity of 0.125 mV/V/mmHg and linearity of 99%. This design has fulfilled the specification of the intracranial pressure sensor.