Amorphous titanium dioxide (TiO2) several nm thick deposited on crystalline silicon at 100°C has been shown to block holes due to a large valence band offset and be transparent to electrons. In this work, using a combination of temperature-dependent I-V measurements and multiple p-type substrate types (CZ, FZ), we demonstrate that the dominant current mechanism in an Al/TiO2/p-Si heterojunction is the injection of electrons into the quasi-neutral silicon, implying a highly effective electron-selective contact.