Thallium Bromide (TlBr) is a promising room-temperature radiation detector material with excellent charge transport properties. However, several critical issues need to be addressed before deployment of this material for long-term field applications can be realized. Recent results indicate that the controlling factors contributing to the degradation of TlBr detectors at room temperature is related to electro-migration of Br− ions and their reaction with the anode metal. We present results obtained upon improving the stability of the semiconductor-metal interface, including plasma processing of TlBr surfaces and selection of an appropriate contact metal.