This paper proposes a direct photo emission monitoring during avalanche operations for power devices using a streak camera. IGBTs (Insulated Gate Bipolar Transistors) are very important power devices and IGBTs have been developed to improve trade-off relation between on-state losses and switching losses. And also a reliability enhancement of IGBTs is very important issue. To obtain reliability enhancement, it is important to investigate an avalanche phenomenon of IGBTs, directly. During avalanche operation, it is well known that visible light is emitted from the device. This is the first study to succeed in observing the photo emission directly from avalanche phenomena under UIS (Unclamped Inductive Switching) condition of IGBTs. We have also measured moving the emission region in edge termination area.