Field-Effect Transistors (FETs) with Three Independent Gates (TIG) can achieve different modes of operation according to the bias of the gate terminals. In particular, TIG FETs were recently shown capable of (i) device-level polarity control, (ii) dynamic threshold modulation and (iii) subthreshold slope tuning down to ultra-steep-slope operation. Experimentally demonstrated using both contemporary FinFETs and emerging silicon nanowires channel technologies, TIGFETs unlock several design opportunities. In this paper, we comment on the digital, analog and RF design capabilities offered by this new class of transistors.