The trend towards SiC-based high power density converter requires to drive SiC MOSFET with high-speed switching. However, it tends to aggravate dv/dt effect due to the impact of parasitic parameters, resulting in shoot-through and high device stress in the half bridge configuration. In this work, a novel gate assisted circuit is proposed to eliminate shoot-through issue without compromise on switching speed. The mathematical model for the gate assisted circuit is developed. Then the switching test experiment is set up to validate its performance with commercial SiC half bridge module, which shows a high dv/dt up to 20 and 31 V/ns at turn-on and turn-off respectively and a 34% reduction of switching loss without any shoot-through issue.