Crossed anisotropy amorphous Co85Zr3Nb12 thin film with total magnetic thickness of 2.0 µm is deposited on to the passivation of a test IC chip to accommodate intra IC chip level digital-to-RF noise suppression and telecommunication performance simultaneously. This technology is applicable to other frequency band in 0.41 to 3 GHz by using Co85−(x+y)Zr3+xNb12+y(x: 0−5.5, y: 0−11.0) film. In-band spurious tone is attenuated by 10 dB and the minimum input power level to meet the 3GPP criteria is improved by 8 dB. Intra electromagnetic coupling analysis from digital to RF circuits within the bandwidth of wireless channels have clarified that the magnetic film suppressed conduction noise in on-chip wires.